2SD1898T100R Rohm Semiconductor, 2SD1898T100R Datasheet - Page 3

TRANS NPN 80V 1A SOT-89

2SD1898T100R

Manufacturer Part Number
2SD1898T100R
Description
TRANS NPN 80V 1A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SD1898T100R

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 20mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 500mA, 3V
Power - Max
2W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Bce Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
500mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-89
No. Of
RoHS Compliant
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
0.5 W
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
100 MHz
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SD1898T100R
2SD1898T100RTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1898T100R
Manufacturer:
ROHM
Quantity:
1 660
Part Number:
2SD1898T100R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
2SD1898T100R
Quantity:
9 000
Electrical characteristic curves
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
c
www.rohm.com
1000
500m
200m
100m
0.05
0.02
0.01
100
50m
20m
10m
2009 ROHM Co., Ltd. All rights reserved.
0.1
Fig.1 Grounded emitter propagation
2.0
1.0
0.5
0.2
0.1
10
5m
2m
1m
10
1
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1 0.2 0.5 1 2
0
Fig.4 Collector-emitter saturation
COLLECTOR TO EMITTER VOLTAGE : V
BASE TO EMITTER VOLTAGE : V
Ic Max (Pulse)
characteristics
COLLECTOR CURRENT : I
Fig.7 Safe operating area
voltage vs. collector current
I
C
/I
B
=20/1
10
(2SD1863)
10/1
5 10 20 50100
100
Ta=25°C
Single
non-repetitive
pulse
C
(
Ta=25°C
Ta=25°C
V
mA)
200
CE
BE
1000
=5V
(V)
500
CE
1000
(V)
500
200
100
500m
200m
100m
20
10
50
50m
20m
10m
5
2
5m
2m
1m
1
10
1.0
0.8
0.6
0.4
0.2
5
2
1
COLLECTOR TO EMITTER VOLTAGE : V
Fig.5 Gain bandwidth product vs.
0.1 0.2 0.5 1 2
0
COLLECTOR TO EMITTER VOLTAGE : V
0
2
Ic Max (Pulse)
EMITTER CURRENT : −I
Fig.2 Grounded emitter output
emitter current
Fig.8 Safe operating area
5
2
10
characteristics
(2SD1898)
4
20
3/3
5 10 20 50100
50 100 200 500 1000
6
E
(mA)
8
Ta=25°C
Single
non-repetitive
pulse
Ta=25°C
V
CE
200
6mA
=5V
Ta=25°C
2mA
5mA
I
10
1mA
B
4mA
=0mA
3mA
500
CE
1000
CE
(
V)
(
V)
1000
100
10
Fig.6 Collector output capacitance vs.
1
1000
0.1 0.2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
100
0
0
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR CURRENT : I
0.5
Fig.3 DC current gain vs.
1
10
2009.12 - Rev.C
collector current
2
Data Sheet
5
10
100
20
Ta=25°C
f=1MHz
I
Ic=0A
E
: V
=0A
C
CB
EB
(
Ta=25°C
mA)
50 100
(
(
V
1V
V)
V)
CE
1000
=3V

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