BCP53,115 NXP Semiconductors, BCP53,115 Datasheet - Page 5

• Manufacturer Part Number: BCP53,115
• Description: TRANSISTOR PNP 80V 1A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BCP53,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 145MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1000 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 63
• Frequency (max): 145MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4872-2; 933917330115; BCP53 T/R; BCP53 T/R; BCP53,115

NXP Semiconductors
BC640_BCP53_BCX53_8
Product data sheet
Fig 1. Power derating curve SOT54
Fig 3. Power derating curves SOT89
P
(W)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
tot
1.6
1.2
0.8
0.4
0
FR4 PCB, standard footprint
75
25
0
25
75
P
(W)
tot
1.6
1.2
0.8
0.4
0
75
125
T
006aaa219
amb
2
2
( C)
Rev. 08 — 22 February 2008
25
175
(1)
(2)
(3)
0
25
Fig 2. Power derating curves SOT223
75
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
P
(W)
tot
1.6
1.2
0.8
0.4
BC640; BCP53; BCX53
0
75
125
T
006aaa221
amb
80 V, 1 A PNP medium power transistors
( C)
25
175
(1)
(2)
0
25
75
© NXP B.V. 2008. All rights reserved.
125
T
006aaa220
amb
2
( C)
175
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