2SB1197KT146Q Rohm Semiconductor, 2SB1197KT146Q Datasheet
2SB1197KT146Q
Manufacturer Part Number
2SB1197KT146Q
Description
TRANSISTOR PNP 32V 0.8A SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1197KT146Q.pdf
(3 pages)
Specifications of 2SB1197KT146Q
Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
200mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-32V
Power Dissipation Pd
200mW
Dc Collector Current
-800mA
Transistor Case Style
SC-59
No. Of Pins
3
Svhc
No SVHC (18-Jun-2010)
Dc
RoHS Compliant
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 32 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 0.8 A
Maximum Dc Collector Current
0.8 A
Power Dissipation
0.2 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
200 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1197KT146QTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1197KT146Q
Manufacturer:
ROHM
Quantity:
1 528
Part Number:
2SB1197KT146Q
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Low Frequency Transistor ( 32V, 0.8A)
2SB1197K
1) Low V
2) I
3) Complements the 2SD1781K.
Epitaxial planar type
PNP silicon transistor
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Features
Structure
Absolute maximum ratings (Ta=25 C)
Electrical characteristics (Ta=25 C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
V
C
CE(sat)
I
= 0.8A.
C
/ I
CE(sat)
B
= 0.5A / 50mA
Parameter
Parameter
.
0.5V
Symbol
V
V
V
Tstg
P
CBO
CEO
I
Tj
EBO
C
Symbol
C
V
BV
BV
BV
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
T
EBO
Min.
−40
−32
120
−5
−
−
−
−
−
−55 to 150
Limits
−0.8
−40
−32
150
−5
0.2
∗
External dimensions (Unit : mm)
Denotes h
Typ.
200
12
ROHM : SMT3
EIAJ : SC-59
−
−
−
−
−
−
−
−0.5
−0.5
−0.5
Max.
FE
390
30
−
−
−
−
Unit
°C
°C
W
V
V
V
A
MHz
Unit
μ A
μ A
pF
V
V
V
V
−
(1)
0.95 0.95
2.9
1.9
I
I
I
V
V
I
V
V
V
C
C
E
C
±
±
CB
EB
CE
CE
CB
= −50 μ A
= −1mA
= −50 μ A
/I
0.2
0.2
(2)
(3)
All terminals have the
same dimensions
0.4
B
= −4V
= −20V
= −3V, I
= −5V, I
= −10V, I
Abbreviated symbol: AH
= −0.5A/ −50mA
+
−0.05
0.1
Conditions
C
E
=50mA, f=100MHz
= −100mA
E
=0A, f=1MHz
0.15
+
−0.06
1.1
0.1
Rev.A
0.8
+
−0.1
0.2
±
∗
0.1
2SB1197K
0
~
0.1
1/2
(1) Emitter
(2) Base
(3) Collector
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2SB1197KT146Q Summary of contents
Page 1
Transistors Low Frequency Transistor ( 32V, 0.8A) 2SB1197K Features 1) Low V . CE(sat) V 0.5V CE(sat 0.5A / 50mA 0.8A Complements the 2SD1781K. Structure Epitaxial planar type PNP ...
Page 2
Transistors Packaging specifications and h FE Package Code Type h Basic ordering unit (pieces) FE 2SB1197K QR h values are classified as follows : FE Item 120 to 270 180 to 390 FE −200 Ta=25°C −180 −160 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...