BC817-16,215 NXP Semiconductors, BC817-16,215 Datasheet - Page 7

• Manufacturer Part Number: BC817-16,215
• Description: TRANSISTOR NPN 500MA 45V SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC817-16,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4865-2; 933628620215; BC817-16 T/R; BC817-16 T/R; BC817-16,215

NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 4.
Fig 6.
V
BEsat
(V)
10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
−1
1
10
I
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
I
Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
−1
C
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
1
(1)
(2)
(3)
10
V
BEsat
(V)
10
10
−1
10
1
10
2
−1
I
006aaa134
C
(mA)
Rev. 06 — 17 November 2009
10
1
3
(1)
(2)
(3)
10
Fig 5.
V
BC817; BC817W; BC337
BEsat
(V)
10
(1) T
(2) T
(3) T
45 V, 500 mA NPN general-purpose transistors
10
−1
10
1
10
I
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
2
−1
C
amb
amb
amb
I
/I
006aaa136
C
B
(mA)
= 10
= −55 °C
= 25 °C
= 150 °C
10
1
3
(1)
(2)
(3)
10
10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa135
C
(mA)
10
3
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