2SC2258 Panasonic - SSG, 2SC2258 Datasheet

TRANS NPN HF 250VCEO .1A TO-126

2SC2258

Manufacturer Part Number
2SC2258
Description
TRANS NPN HF 250VCEO .1A TO-126
Manufacturer
Panasonic - SSG
Datasheet

Specifications of 2SC2258

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
250V
Vce Saturation (max) @ Ib, Ic
1.2V @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 40mA, 20V
Power - Max
4W
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC2258
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
■ Features
■ Absolute Maximum Ratings T
Note) * 1: Without heat sink
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• High collector-emitter voltage (Base open) V
• High transition frequency f
• TO-126B package which requires no insulation plate for installa-
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-emitter cutoff current
(Resistor between B and E)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
tion to the heat sink
* 2 :With a 100 × 100 × 2 mm Al heat sink
Parameter
Parameter
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
CEO
EBO
a
CP
stg
V
I
h
h
C
CE(sat)
C
C
j
CER
f
EBO
FE1
FE2
= 25°C
BE
T
ob
−55 to +150
CEO
Rating
I
V
V
V
V
I
V
V
1.2
E
C
250
250
100
150
4
150
CE
CE
CE
CE
CB
CB
= 0.1 mA, I
= 50 mA, I
7
* 2
SJD00098BED
* 1
= 20 V, I
= 250 V, R
= 20 V, I
= 50 V, I
= 10 V, I
= 50 V, I
Conditions
Unit
B
E
C
C
C
E
mA
mA
C
°C
°C
W
V
V
V
= −10 mA, f = 200 MHz
= 5 mA
= 5 mA
= 40 mA
= 40 mA
= 0, f = 1 MHz
BE
= 0
= 100 kΩ
φ 3.16
±0.1
0.75
±0.1
1
8.0
4.6
Min
40
30
7
+0.5
–0.1
±0.2
2
3
2.3
0.5
Typ
100
±0.2
3.0
±0.1
TO-126B-A1 Package
0.5
Max
100
1.2
1.2
4.5
±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
3.2
1.76
MHz
Unit
µA
pF
V
V
V
±0.2
±0.1
1

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2SC2258 Summary of contents

Page 1

... Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) V • High transition frequency f T • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ ...

Page 2

... (1)With a 100×100×2mm Al heat sink (2)Without heat sink ( ( 120 160 Ambient temperature T (°C) a  120 V =10V CE T =25˚C C 100 0.4 0.8 1.2 1.6 2.0 Base current I (mA) B  240 V =10V CE 200 T =100˚C C 160 120 25˚C 80 –25˚C ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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