FZT851TA Diodes Zetex, FZT851TA Datasheet - Page 2

• Manufacturer Part Number: FZT851TA
• Description: TRANS NPN 60V 6000MA SOT-223
• Manufacturer: Diodes Zetex

Specifications of FZT851TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 375mV @ 300mA, 6A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 1V
• Power - Max: 3W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: FZT851TR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
Switching Times
SYMBOL
V
V
V
V
I
I
R 1k
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
on
off
FE
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
MIN.
150
150
60
6
100
100
75
25
3 - 261
amb
= 25°C unless otherwise stated)
TYP.
220
220
85
8
200
200
120
50
130
45
45
1100
MAX. UNIT
50
1
50
1
10
50
100
170
375
1200
1150
300
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
A
A
CONDITIONS.
I
I
I
I
V
V
T
V
V
T
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B2
amb
amb
CB
CB
CB
CB
EB
CB
FZT851
=100 A
=10mA*
=100 A
=0.1A, I
=1A, I
=2A, I
=6A, I
=6A, I
=10mA, V
=2A, V
=5A, V
=10A, V
=100mA, V
=1A, I
=1 A, RB 1k
=6A, V
=100mA, V
=6V
=120V
=120V,
=120V
=120V,
=10V, f=1MHz
=100°C
=100°C
B
B
B
B
B1
CE
CE
CE
=50mA*
=50mA*
=300mA*
=300mA*
B
=100mA
CE
=1V*
=1V*
=1V*
=5mA*
=1V*
CE
CE
=1V
CC
=10V
=10V