ZXT13N50DE6TA Diodes Zetex, ZXT13N50DE6TA Datasheet - Page 4

• Manufacturer Part Number: ZXT13N50DE6TA
• Description: TRANS NPN LO SAT 50V 4A SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXT13N50DE6TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 180mV @ 400mA, 4A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 115MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXT13N50DE6TR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - NOVEMBER 1999
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
100
50
7.5
250
300
100
= 25°C unless otherwise stated).
10
4
TYP.
190
70
8.5
150
175
145
400
450
220
115
31
220
830
30
75
8.0
MAX.
100
100
100
100
200
230
180
1.0
0.9
900
12
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
ZXT13N50DE6
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
V
B1
CB
EB
CES
CB
=100 A
=100 A
=10mA*
=0.1A, I
=1A, I
=3A, I
=4A, I
=4A, I
=4A, I
=4A, V
=10mA, V
=1A, V
=4A, V
=10A, V
=50mA, V
CC
=I
=80V
=6V
=10V, f=1MHz
=10V, I
B2
=80V
=20mA
B
B
B
B
B
CE
CE
CE
=10mA*
=50mA*
=100mA*
=400mA*
=100mA*
B
CE
=10mA*
=2V*
=2V*
=2V*
C
CE
CE
=2V*
=1A
=2V*
10V