FCX589TA Diodes Zetex, FCX589TA Datasheet
FCX589TA
Manufacturer Part Number
FCX589TA
Description
TRANS PNP -30V -1000MA SOT-89
Manufacturer
Diodes Zetex
Datasheet
1.FCX589TA.pdf
(1 pages)
Specifications of FCX589TA
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
650mV @ 200mA, 2A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 500mA, 2V
Power - Max
1W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FCX589TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCX589TA
Manufacturer:
ZETEX
Quantity:
20 000
SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
For typical Characteristics graphs see FMMT549 datasheet
PARAMETER
Collector-Base Voltage
PARAMETER
Breakdown Voltages
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
Collector Cut-Off Current
Collector -Emitter Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
amb
=25°C
P89
SYMBOL MIN.
V
V
V
I
I
I
V
V
V
h
f
C
CBO
CES
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
3 - 91
amb
-50
-30
-5
100
100
80
40
100
I
I
SYMBOL
V
V
V
I
P
T
CM
C
B
tot
j
CBO
CEO
EBO
= 25°C).
:T
stg
MAX.
-100
-100
-100
-0.35
-0.65
-1.2
-1.1
300
15
UNIT
V
V
V
nA
nA
nA
V
V
V
MHz
pF
2%
-65 to +150
VALUE
-200
-50
-30
-5
-2
-1
1
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
f=100MHz
V
C
C
E
C
C
C
C
C
C
C
C
C
CB
CES
EB
CB
FCX589
=-100 A
=-100 A
=-10mA*
=-1A, I
=-2A, I
=-1A, I
=-1mA, V
=-500mA, V
=-1A, V
=-2A, V
=-100mA, V
=-1A, V
C
=-4V
=-30V
=-10V, f=1MHz
=-30V
B
B
B
B
CE
CE
CE
=-100mA*
=-200mA*
=-100mA*
=-2V*
=-2V*
=-2V*
CE
C
UNIT
=-2V*
CE
CE
mA
W
°C
V
V
V
A
A
=-2V*
=-5V
E
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