FCX558TA Diodes Zetex, FCX558TA Datasheet
FCX558TA
Manufacturer Part Number
FCX558TA
Description
TRANSISTOR PNP 400V 200MA SOT-89
Manufacturer
Diodes Zetex
Datasheet
1.FCX558TA.pdf
(1 pages)
Specifications of FCX558TA
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 6mA, 50mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 50mA, 10V
Power - Max
1W
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FCX558TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCX558TA
Manufacturer:
ZETEX
Quantity:
20 000
SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – MARCH 1996
FEATURES
*
*
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT558 datasheet.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
400 Volt V
P
tot
= 1 Watt
CEO
amb
=25°C
FCX458
P58
SYMBOL
V
V
V
I
V
V
V
h
f
C
t
t
I
CBO
EBO
T
on
off
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
FE
obo
;I
CES
MIN.
-400
-400
-5
100
100
15
50
3 - 90
amb
1600 Typical
95 Typical
SYMBOL
V
V
V
I
I
P
T
C
CM
tot
j
CBO
CEO
EBO
:T
= 25°C).
stg
MAX.
-100
-100
-0.2
-0.5
-0.9
-0.9
300
5
UNIT
V
V
V
nA
nA
V
V
V
V
MHz
pF
ns
ns
2%
-65 to +150
VALUE
-400
-400
-200
-500
-5
1
CONDITIONS.
I
I
I
V
V
I
I
I
I
I
I
I
I
f=20MHz
V
I
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
C
FCX558
=-100 A
CB
EB
CB
=-100 A
=-10mA*
=-20mA, I
=-50mA, I
=-50mA, I
=-50mA, V
=-1mA, V
=-50mA, V
=-100mA, V
=-10mA, V
=-50mA, V
=-5mA, I
=-4V
=-20V, f=1MHz
=-320V; V
B
CE
B2
B
B
B
CE
CE
C
=-2mA*
=-6mA*
=-5mA*
CE
=-10mA
UNIT
=-10V
=-100V
CES
CE
C
mA
mA
=-10V*
=-20V
=-10V*
°C
W
V
V
V
=-10V*
= 320V
E
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