DZT658-13 Diodes Inc, DZT658-13 Datasheet
DZT658-13
Manufacturer Part Number
DZT658-13
Description
TRANS NPN 400V 0.5A SOT-223
Manufacturer
Diodes Inc
Datasheet
1.DZT658-13.pdf
(3 pages)
Specifications of DZT658-13
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 200mA, 10V
Power - Max
1W
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
1000 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DZT658-13
DZT658DITR
DZT658DITR
Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation @T
Thermal Resistance, Junction to Ambient Air (Note 3) @T
Operating and Storage Temperature Range
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC Characteristics
Transition Frequency
Output Capacitance
Switching Times
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS31308 Rev. 2 - 2
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001,
4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
A
= 25°C (Note 3)
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
V
V
V
V
Symbol
V
V
= 25°C
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
h
CBO
EBO
t
t
f
off
FE
obo
on
T
www.diodes.com
Min
400
400
1 of 3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
50
40
50
⎯
⎯
⎯
5
T
Symbol
Symbol
J
V
V
V
R
, T
I
P
0.075
CBO
CEO
EBO
CM
I
0.06
0.08
Typ
θ JA
110
100
138
175
C
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D
⎯
⎯
⎯
⎯
⎯
⎯
⎯
85
⎯
⎯
STG
Max
0.25
100
100
0.3
0.5
0.9
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
TOP VIEW
NPN SURFACE MOUNT TRANSISTOR
Schematic and Pin Configuration
MHz
Unit
nA
nA
pF
⎯
ns
ns
V
V
V
V
V
V
V
V
-55 to +150
4
Value
Value
400
400
125
Test Condition
I
I
I
V
V
I
I
I
I
V
V
V
V
V
V
V
I
0.5
C
C
E
C
C
C
C
B1
5
1
1
CB
EB
CE
CE
CE
CE
CE
CB
CC
= 20mA, I
= 50mA, I
= 100μA, I
= 10mA, I
= 100μA, I
= 100mA, I
= 100mA, I
SOT-223
= 10mA, I
= 4V, I
= 320V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
= 20V, I
= 20V, f = 1MHz
= 100V, I
3
BASE
C
C
C
C
B
B
B
C
C
2
C
E
= 0
= 100mA
= 1mA
= 100mA
B2
B
B
E
C
= 1mA
= 5mA
= 0
= 200mA
= 30mA, f = 30MHz
= 0
= 0
= 10mA
= 10mA
= 0
= 100mA
= -20mA
1
1
COLLECTOR
DZT658
EMITTER
2,4
© Diodes Incorporated
3
°C/W
Unit
Unit
°C
W
V
V
V
A
A
DZT658
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DZT658-13 Summary of contents
Page 1
... B 0. 50mA 5mA 100mA 10mA 100mA 10mA 5V 100mA CE C ⎯ 5V 1mA CE C ⎯ ⎯ 5V 100mA CE C ⎯ 10V 200mA CE C ⎯ MHz V = 20V 30mA 30MHz 20V 1MHz CB ⎯ 100V 100mA CC C ⎯ 10mA -20mA B1 B2 © Diodes Incorporated DZT658 ...
Page 2
... I = 5mA 4mA 3mA 2mA 1mA COLLECTOR-EMITTER VOLTAGE (V) CE 0.01 0 COLLECTOR CURRENT (A) C Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.01 0 COLLECTOR CURRENT (A) C Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current © Diodes Incorporated DZT658 ...
Page 3
... Ordering Information (Note 5) Device DZT658-13 Notes: 5. For packaging details our website at http://www.diodes.com/ap2007.pdf. Marking Information Package Outline Dimensions Suggested Pad Layout: Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...