FCX493TA Diodes Zetex, FCX493TA Datasheet - Page 2

• Manufacturer Part Number: FCX493TA
• Description: TRANSISTOR NPN 100V 1A SOT-89
• Manufacturer: Diodes Zetex

Specifications of FCX493TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 250mA, 10V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCX493TR

FCX493
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Base current
Power dissipation at T
Operating and storage temperature range
PARAMETER
Breakdown voltages
Collector cut-off currents
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
turn on voltage
Static forward current transfer
ratio
Transition frequency
Output capacitance
S E M I C O N D U C T O R S
amb
=25°C
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
CBO
CES
EBO
T
FE
(BR)CBO
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
300 s; duty cycle
= 25°C unless otherwise stated)
MIN.
120
100
100
100
150
60
20
2
5
SYMBOL
V
V
V
I
I
I
P
T
C
CM
B
tot
j
CBO
CEO
EBO
:T
stg
MAX.
1.15
100
100
100
300
0.3
0.6
1.0
10
2%.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
-65 to +150
VALUE
120
100
200
5
1
2
1
CONDITIONS
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
f=100MHz
V
ISSUE 5 - OCTOBER 2005
C
C
E
C
C
C
C
C
C
C
C
C
CB
CES
EB
CB
=100µA
=100µA
=10mA*
=500mA, I
=1A, I
=1A, I
=1A, V
=1mA, V
=250mA, V
=500mA, V
=1A, V
=50mA, V
=100V
=4V
=10V, f=1MHz
=100V
B
B
CE
CE
=100mA
=100mA
CE
=10V
=10V*
CE
B
=10V*
CE
CE
=50mA
UNIT
=10V
mA
W
°C
=10V*
=10V*
A
A
V
V
V