FCX458TA Diodes Zetex, FCX458TA Datasheet
FCX458TA
Manufacturer Part Number
FCX458TA
Description
TRANSISTOR NPN 400V 225MA SOT-89
Manufacturer
Diodes Zetex
Datasheet
1.FCX458TA.pdf
(1 pages)
Specifications of FCX458TA
Transistor Type
NPN
Current - Collector (ic) (max)
225mA
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 6mA, 50mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 50mA, 10V
Power - Max
1W
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FCX458TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCX458TA
Manufacturer:
Diodes/Zetex
Quantity:
25 981
Part Number:
FCX458TA
Manufacturer:
ZETEX
Quantity:
20 000
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
*
*
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
PARAMETER
Collector-Base Voltage
PARAMETER
Breakdown Voltages
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation at T
Operating and Storage Temperature Range
Collector Cut-Off Currents
Emitter Cut-Off Current
Emitter Saturation Voltages V
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
400 Volt V
P
tot
= 1 Watt
CEO
amb
=25°C
FCX558
N58
SYMBOL
V
V
V
I
I
I
V
V
h
f
C
t
t
CBO
CES
EBO
T
on
off
FE
(BR)CBO
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
MIN.
400
400
5
100
100
15
50
135 Typical
2260 Typical
3 - 85
amb
I
SYMBOL
V
V
V
I
P
T
C
CM
tot
j
CBO
CEO
EBO
= 25°C).
:T
stg
MAX.
100
100
100
0.2
0.5
0.9
0.9
300
5
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
ns
ns
2%
-65 to +150
VALUE
400
400
225
500
5
1
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
f=20MHz
V
I
I
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CB
CE
EB
CB
=100 A
=100 A
=10mA*
=20mA, I
=50mA, I
=50mA, I
=1mA, V
=50mA, V
=100mA, V
=10mA, V
=50mA, V
FCX458
=50mA, V
C
=5mA, I
=4V
=320V
=20V, f=1MHz
=320V
B
CE
B2
B
B
B
CE
CE
CE
C
=2mA*
=6mA*
=5mA*
=-10mA
=10V
=100V
C
CE
UNIT
=10V*
=10V*
=20V
mA
mA
W
°C
=10V**
V
V
V
E
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