BSR43TA Diodes Zetex, BSR43TA Datasheet

TRANSISTOR NPN 80V 1A SOT-89

BSR43TA

Manufacturer Part Number

BSR43TA

Description

TRANSISTOR NPN 80V 1A SOT-89

Manufacturer

Diodes Zetex

Datasheet

1.BSR43TA.pdf (1 pages)

Specifications of BSR43TA

Transistor Type

NPN

Current - Collector (ic) (max)

1A

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

500mV @ 50mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

1W

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SC-62, SOT-89, TO-243 (3 Leads + Tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

-

Other names

BSR43TA
BSR43TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

HardFindElectronics Ltd

HardFindElectronics Ltd

Part Number:

BSR43TA

Manufacturer:

DIODES

Quantity:

150

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

BSR43TA

Manufacturer:

DIODES/美台

Quantity:

20 000

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Download datasheet (42Kb)

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

COMPLEMENTARY TYPES –

PARTMARKING DETAIL –

ABSOLUTE MAXIMUM RATINGS.

ELECTRICAL CHARACTERISTICS (at T

*Measured under pulsed conditions.

For typical characteristics graphs see FMMT493 datasheet.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

Operating and Storage Temperature Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer Ratio

Output Capacitance

Input Capacitance

Transition Frequency

Turn-On Time

Turn-Off Time

amb

=25°C

BSR33

AR4

SYMBOL

V

V

V

I

V

V

h

C

C

f

T

T

CBO

T

FE

on

off

(BR)CBO

(BR)CEO

(BR)EBO

CE(sat)

BE(sat)

obo

ibo

amb

TBA

MIN.

90

80

5

30

100

50

100

SYMBOL

V

V

V

I

I

I

P

T

= 25°C unless otherwise stated).

CM

C

B

TOT

j

CBO

CEO

EBO

:T

stg

MAX.

100

50

0.25

0.5

1.0

1.2

300

12

90

250

1000

UNIT

V

V

V

nA

V

V

V

V

pF

pF

MHz

ns

ns

A

-65 to +150

VALUE

CONDITIONS.

I

I

I

V

V

I

I

I

I

I

I

I

V

V

I

f =35MHz

V

I

100

C

C

E

C

C

C

C

C

C

C

C

B1

90

80

CB

CB

CB

EB

CC

=100 A

=10mA

=10 A

=50mA, V

5

2

1

1

=150mA, I

=500mA, I

=150mA, I

=500mA, I

=100 A, V

=100mA, V

=500mA, V

=I

=60V

=60V, Tamb =125°C

=20V, I

=10V, f=1MHz

=0.5V, f=1MHz

BSR43

C

B2

=5mA

SOT89

B

*

C

CE

=100mA

B

B

B

B

CE

CE

CE

=10V

=15mA

=15mA

=50mA

=50mA

C

=5V

UNIT

=5V

=5V

mA

°C

W

V

V

V

A

A

E

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