Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation @ T
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ T
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Note:
DS30708 Rev. 6 - 2
Epitaxial Planar Die Construction
Complementary NPN Type Available (DCP55)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish − Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
4. Device mounted on Polyimide PCB with a copper area of 1.8cm
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
A
= 25°C
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
DCP52-16
@T
A
= 25°C unless otherwise specified
A
= 25°C (Note 3)
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
I
I
BE(ON)
h
CBO
EBO
f
FE
T
www.diodes.com
2
.
Min
100
-60
-60
⎯
⎯
⎯
⎯
⎯
40
25
⎯
-5
1 of 4
Symbol
T
j,
R
T
P
Symbol
θ JA
STG
d
V
V
V
I
CBO
CEO
EBO
CM
I
C
Typ
200
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TOP VIEW
-100
Max
-0.5
-1.0
250
250
-20
-10
⎯
⎯
⎯
⎯
⎯
PNP SURFACE MOUNT TRANSISTOR
Schematic and Pin Configuration
-55 to +150
4
1 (Note 3)
2 (Note 4)
MHz
Unit
Value
Value
nA
μA
μA
⎯
-1.5
V
V
V
V
V
-60
-60
125
-5
-1
SOT-223
I
I
I
V
V
V
I
I
I
I
I
I
f = 100MHz
3
C
C
E
C
C
C
C
C
C
CB
CB
EB
= -100μA, I
= -10mA, I
= -10μA, I
= -500mA, I
= -500mA, V
= -150mA, V
= -500mA, V
= -150mA, V
= -50mA, V
DCP52/-16
DCP52/-16
= -5V, I
= -30V, I
= - 30V, I
2
BASE
COLLECTOR
1
1
Conditions
EMITTER
C
C
B
E
E
= 0A
E
CE
= 0A
B
= 0A
= 0A
CE
CE
CE
CE
2,4
= 0A
= 0A, T
= -50mA
3
= -5V,
© Diodes Incorporated
= -2V
= -2V
= -2V
= -2V
Unit
V
V
V
A
A
°C/W
A
DCP52/-16
Unit
°C
W
= 150°C