FMMT591ATA Diodes Zetex, FMMT591ATA Datasheet
FMMT591ATA
Manufacturer Part Number
FMMT591ATA
Description
TRANS PNP 40V 1A MED PWR SOT23-3
Manufacturer
Diodes Zetex
Datasheet
1.FMMT591ATA.pdf
(4 pages)
Specifications of FMMT591ATA
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 100mA, 5V
Power - Max
500mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
91A
FMMT591A
FMMT591ATR
FMMT591A
FMMT591ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMMT591ATA
Manufacturer:
Diodes/Zetex
Quantity:
112 034
Part Number:
FMMT591ATA
Manufacturer:
DIODES/美台
Quantity:
20 000
FMMT591A
SOT23 PNP silicon planar medium power transistor
Features
Low equivalent on resistance R
Part Marking Detail -91A
Complementary type -FMMT491A
Absolute maximum ratings.
Electrical characteristics (at T
(*) Measured under pulse conditions. Pulse width=300 s. Duty cycle 2%
Issue 4 - August 2008
© Diodes Incorporated, 2008
NOTES:
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Peak pulse current
Continuous Collector current
Base current
Power dissipation at Tamb=25oC
Operating an storage temperature range
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-Emitter cut-off current
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
CE(sat)
amb
= 350m
= 25°C)
V
V
V
I
I
I
V
V
V
h
f
C
CBO
EBO
CES
T
Symbol
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
at 1A
1
V
V
V
I
I
I
P
T
CM
C
B
tot
j
Symbol
CBO
CEO
EBO
; T
Min
300
300
250
160
150
-40
-40
30
-5
STG
Diodes Incorporated
A Product Line of
-0.35
Max
-100
-100
-100
-0.2
-0.5
-1.1
-1.0
800
10
-55 to +150
Value
-200
500
-40
-40
MHz
-5
-2
-1
Unit
nA
nA
nA
pF
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
f=100MHz
V
I
C
C
C
C
C
C
C
C
CB
=-100mA, I
I
=-1mA,
=-100mA
=-500mA
=-1A
=-2A
=-50mA, V
=-500mA, I
C
I
C
I
=-1A, I
C
=-10V, f=1MHz
=-1A, I
mW
Unit
mA
=-1A, V
°C
V
V
V
A
A
I
(*)
(*)
C
Conditions
I
I
V
V
C
E
=-10mA
V
CES
www.diodes.com
=-100
=-100 A
CB
EB
www.zetex.com
B
B
(*)
(*)
=-30V
=-100mA
=-4V
=-30V
=-50mA
CE
CE
B
B
, V
=-1mA
=-20mA
=-5V
=-10V
A
CE
(*)
=-5V
(*)
(*)
(*)
(*)
(*)
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FMMT591ATA Summary of contents
Page 1
FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance R Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Peak pulse current Continuous Collector current Base current Power ...
Page 2
Electrical characteristics Issue 4 - August 2008 © Diodes Incorporated, 2008 2 FMMT591A www.zetex.com www.diodes.com ...
Page 3
Issue 4 - August 2008 © Diodes Incorporated, 2008 Intentionally left blank 3 FMMT591A www.zetex.com www.diodes.com ...
Page 4
... Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. ...