2SC6037J0L Panasonic - SSG, 2SC6037J0L Datasheet

TRANS NPN 12VCEO 500MA SSMINI-3

2SC6037J0L

Manufacturer Part Number
2SC6037J0L
Description
TRANS NPN 12VCEO 500MA SSMINI-3
Manufacturer
Panasonic - SSG
Datasheets

Specifications of 2SC6037J0L

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 10mA, 2V
Power - Max
125mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SS Mini3-F1 (SC 89)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SC6037J0LTR
Transistors
2SC6037J
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2161J
 Features
 Absolute Maximum Ratings T
 Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
 Low collector-emitter saturation voltage V
 SS-Mini type package, allowing downsizing of the equipment and automatic
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
insertion through the tape packing
Parameter
Parameter
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
= 25°C
Symbol
CE(sat)
V
V
V
T
I
P
I
T
CBO
CEO
EBO
Symbol
CP
stg
C
V
C
j
V
V
V
I
h
CE(sat)
C
CBO
CBO
CEO
EBO
f
FE
T
ob
–55 to +125
Rating
I
I
I
V
V
I
V
V
C
C
E
C
500
125
125
CB
CE
CB
CB
15
12
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 200 mA, I
5
1
= 2 V, I
= 10 V, I
= 2 V, I
= 10 V, f = 1 MHz
SJC00325AED
C
E
B
E
C
E
= 10 mA
= –10 mA, f = 200 MHz
= 0
Unit
mW
Conditions
mA
= 0
= 0
B
= 0
°C
°C
V
V
V
A
= 10 mA
Marking Symbol : 4U
1: Base
2: Emitter
3: Collecter
0.27
±0.02
(0.50)(0.50)
1.60
Min
1.00
270
3
1
15
12
5
+0.05
−0.03
±0.05
2
Typ
200
4.5
SSMini3-F1 Package
Max
680
250
0.1
0.12
+0.03
−0.01
Unit: mm
MHz
Unit
mV
µA
pF
V
V
V
1

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