FMMTA42TA Diodes Zetex, FMMTA42TA Datasheet
FMMTA42TA
Manufacturer Part Number
FMMTA42TA
Description
TRANS HV NPN 300V 200MA SOT23-3
Manufacturer
Diodes Zetex
Datasheet
1.FMMTA42TA.pdf
(4 pages)
Specifications of FMMTA42TA
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
330mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
3E
FMMTA42TR
FMMTA42TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMMTA42TA
Manufacturer:
ZETEX
Quantity:
6 000
Part Number:
FMMTA42TA
Manufacturer:
DIODES/美台
Quantity:
20 000
FMMTA42
SOT23 NPN Silicon planar high voltage transistor
Device marking
FMMTA42 - 3E
Complementary types
FMMTA92
Absolute maximum ratings
Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 6 - December 2007
© Zetex Semiconductors plc 2007
NOTES:
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Power dissipation at T
Operating and storage temperature range
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Static forward
current transfer
ratio
Transition frequency
Output capacitance
amb
=25°C
Symbol
V
V
V
I
I
V
V
h
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
obo
amb
= 25°C).
Min.
300
300
25
40
40
50
6
1
Max.
0.1
0.1
0.5
0.9
6
Symbol
T
V
V
V
P
j
:T
CBO
CEO
EBO
I
tot
MHz
C
Unit
µA
µA
µA
µA
stg
pF
V
V
V
V
V
Conditions
I
I
I
V
V
V
V
I
I
I
I
I
I
f=20MHz
V
C
C
E
C
C
C
C
C
C
-55 to +150
FMMTA42
CB
CB
EB
EB
CB
=100µA, I
=100µA, I
=1mA, I
=20mA, I
=20mA, I
=1mA, V
=10mA, V
=30mA, V
=10mA, V
=6V, I
=4V, I
=200V, I
=160V, I
=20V, f=1MHz
300
300
200
330
5
C
C
B
www.zetex.com
=0
=0
CE
=0
B
B
C
E
E
E
CE
CE
CE
=2mA
=2mA
=0
=0
=10V
=0
=0
(*)
=10V
=10V
=20V
(*)
Unit
(*)
(*)
mW
mA
°C
(*)
(*)
V
V
V
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FMMTA42TA Summary of contents
Page 1
FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Power dissipation at T =25°C amb Operating and storage temperature range ...
Page 2
Typical characteristics ...
Page 3
Issue 6 - December 2007 © Zetex Semiconductors plc 2007 Intentionally left blank 3 FMMTA42 www.zetex.com ...
Page 4
Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...