BC817-25W-7 Diodes Inc, BC817-25W-7 Datasheet - Page 2

• Manufacturer Part Number: BC817-25W-7
• Description: TRANS NPN BIPOLAR 45V SC70-3
• Manufacturer: Diodes Inc

Specifications of BC817-25W-7

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BC817-25WDITR

DS30575 Rev. 4 - 2
300
0.5
500
200
100
0.4
0.3
0.2
0.1
400
0
0
0.1
200
400
300
100
0
Fig. 3, Collector Sat. Voltage vs Collector Current
0
I / I = 10
C
Fig. 5, Typical Emitter-Collector Characteristics
V , COLLECTOR-EMITTER VOLTAGE (V)
B
0
typical
limits
at T = 25°C
CE
A
I , COLLECTOR CURRENT (mA)
C
T , SUBSTRATE TEMPERATURE (°C)
SB
1
Fig. 1, Power Derating Curve
150°C
3.2
10
1
100
25°C
100
2.8
I = 0.2mA
B
-50°C
1.4
0.4
1.2
See Note 1
0.8
0.6
2.4
1.6
2
1.8
1000
2
www.diodes.com
200
2 of 3
1000
100
10
1000
100
0.1
100
20
80
60
40
10
0
V
CE
Fig. 2, Gain-Bandwidth Product vs Collector Current
Fig. 4, DC Current Gain vs Collector Current
= 1V
0
1
Fig. 6, Typical Emitter-Collector Characteristics
V , COLLECTOR-EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
CE
I , COLLECTOR CURRENT (mA)
1
C
150°C
T = 25°C
A
10
10
-50°C
10
BC817-16W / -25W / -40W
100
100
T = 25°C
f = 20MHz
A
I = 0.05mA
1V
B
V
CE
0.25
0.2
0.35
0.1
0.3
0.15
= 5V
1000
1000
20