BC807-16W-7 Diodes Inc, BC807-16W-7 Datasheet - Page 2

• Manufacturer Part Number: BC807-16W-7
• Description: TRANS PNP BIPOLAR 45V SC70-3
• Manufacturer: Diodes Inc

Specifications of BC807-16W-7

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BC807-16WDITR

DS30577 Rev. 5 - 2
500
300
100
0.5
200
0.4
0.3
0.2
400
0.1
0
0
0.1
200
400
300
100
0
Fig. 3, Collector Sat. Voltage vs Collector Current
0
-I / -I = 10
Fig. 5, Typical Emitter-Collector Characteristics
C
-V , COLLECTOR-EMITTER VOLTAGE (V)
0
typical
limits
at T = 25°C
CE
B
-I , COLLECTOR CURRENT (mA)
A
C
T , SUBSTRATE TEMPERATURE (°C)
SB
1
Fig. 1, Power Derating Curve
150°C
3.2
10
1
100
25°C
100
-I = 0.2mA
B
2.8
-50°C
1.4
0.4
1.2
0.8
See Note 1
0.6
1.6
2.4
1.8
2
1000
2
www.diodes.com
200
2 of 3
100
80
20
60
40
0
1000
1000
100
100
10
10
0
Fig. 6, Typical Emitter-Collector Characteristics
Fig. 2, Gain-Bandwidth Product vs Collector Current
-V , COLLECTOR-EMITTER VOLTAGE (V)
0.1
-V
1
CE
Fig. 4, DC Current Gain vs Collector Current
CE
= 1V
-I , COLLECTOR CURRENT (mA)
-I , COLLECTOR CURRENT (mA)
C
C
150°C
1
10
10
25°C
-50°C
10
BC807-16W / -25W / -40W
100
-I = 0.05mA
B
100
0.25
0.2
0.35
0.1
0.3
0.15
T = 25°C
f = 20MHz
A
-V
1.0V
CE
= 5.0V
20
1000
1000