MMBTA14-7-F Diodes Inc, MMBTA14-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBTA14-7-F
• Description: TRANSISTOR NPN DARL 30V SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBTA14-7-F

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.3 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA14-FDITR

DS30047 Rev. 11 - 2
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Fig. 1, Max Power Dissipation vs Ambient Temperature
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Fig. 5, Gain Bandwidth Product vs Collector Current
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Fig. 3, DC Current Gain vs Collector Current
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Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
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Fig. 4, Base Emitter Voltage vs. Collector Current
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© Diodes Incorporated
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