MMBTA55-7-F Diodes Inc, MMBTA55-7-F Datasheet
MMBTA55-7-F
Manufacturer Part Number
MMBTA55-7-F
Description
TRANSISTOR PNP 60V SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.MMBTA55-7-F.pdf
(3 pages)
Specifications of MMBTA55-7-F
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
300mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 4 V
Continuous Collector Current
- 0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA55-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
DS30054 Rev. 11 - 2
Epitaxial Planar Die Construction
Complementary NPN Types Available (MMBTA05 /
MMBTA06)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020d
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
MMBTA55 Marking (See Page 3): K2H, K2G
MMBTA56 Marking (See Page 3): K2G
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
www.diodes.com
E
V
V
V
Symbol
V
V
B
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
h
CBO
CEX
TOP VIEW
f
FE
T
Symbol
1 of 3
T
V
V
j
V
C
G
H
R
, T
B
P
CBO
CEO
EBO
I
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
θ JA
C
D
d
STG
A
E
C
J
Please click here to visit our online spice models database.
MMBTA55 / MMBTA56
Min
-4.0
100
-60
-80
-60
-80
2
B C
⎯
⎯
⎯
⎯
50
O
K
E
3
Fire Retardants.
L
MMBTA55
-0.25
Max
-100
-100
-1.2
⎯
⎯
⎯
⎯
⎯
-60
-60
M
-55 to +150
MHz
-500
Unit
-4.0
300
417
nA
nA
⎯
V
V
V
V
V
MMBTA56
I
I
I
V
V
V
V
I
I
I
I
V
f = 100MHz
C
C
E
C
C
C
C
CB
CB
CE
CE
CE
-80
-80
= -100μA, I
= -100mA, I
= -100μA, I
= -1.0mA, I
= -10mA, V
= -100mA, V
= -100mA, V
Dim
= -60V, I
= -80V, I
All Dimensions in mm
= -60V, I
= -80V, I
= -1.0V, I
M
A
B
C
D
E
G
H
K
J
L
α
Test Condition
MMBTA55 / MMBTA56
SOT-23
E
E
BO
BO
0.013
0.903
0.085
E
B
C
C
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
B
Min
CE
= 0
= 0
0°
CE
CE
= 0
= 0
= 0
= -100mA,
= -10mA
= 0V
= 0V
© Diodes Incorporated
= -1.0V
= -1.0V
= -1.0V
°C/W
Unit
mW
mA
°C
V
V
V
0.180
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
8°
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MMBTA55-7-F Summary of contents
Page 1
... Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • MMBTA55 Marking (See Page 3): K2H, K2G • MMBTA56 Marking (See Page 3): K2G • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) ...
Page 2
... 25° 150° -50° 100 I , COLLECTOR CURRENT (mA) C Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current -50° 25° 150° COLLECTOR CURRENT (mA) C Fig. 4 Base Emitter Voltage vs. Collector Current MMBTA55 / MMBTA56 © Diodes Incorporated 1,000 100 ...
Page 3
... Ordering Information (Note 5) Device MMBTA55-7-F MMBTA56-7-F Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 Code Month Jan Feb Code 1 2 Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...