MMBTA42-7-F Diodes Inc, MMBTA42-7-F Datasheet
MMBTA42-7-F
Manufacturer Part Number
MMBTA42-7-F
Description
TRANSISTOR NPN 300V SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.MMBTA42-7-F.pdf
(3 pages)
Specifications of MMBTA42-7-F
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
300mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA42-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA42-7-F
Manufacturer:
DIODES
Quantity:
42 000
Part Number:
MMBTA42-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30062 Rev. 11 - 2
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBTA92)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
Qualified to AEC-Q101 Standards for High
Reliability
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Marking (See Page 2): K3M
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (R
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
dissipation rating (P
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
Characteristic
Characteristic
@T
d
) and power derating curve (figure 1).
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
www.diodes.com
V
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
E
CBO
h
C
EBO
f
B
FE
T
cb
1 of 3
TOP VIEW
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
G
H
C
Symbol
T
D
V
V
V
j
R
, T
A
CBO
CEO
EBO
P
E
I
θJA
Min
300
300
C
6.0
25
40
40
50
⎯
⎯
⎯
⎯
⎯
Please click here to visit our online spice models database.
d
STG
J
B C
2
O
K
3
Fire Retardants.
Max
100
100
0.5
0.9
3.0
⎯
⎯
⎯
⎯
⎯
L
MHz
Unit
nA
nA
pF
⎯
V
V
V
V
V
-55 to +150
M
Value
300
300
500
300
417
6.0
V
CB
I
I
I
V
C
I
I
C
C
C
C
= 20V, f = 1.0MHz, I
CE
MMBTA42
V
= 1.0mA, V
I
I
V
= 30mA, V
I
= 10mA, V
= 20mA, I
= 20mA, I
C
C
E
Dim
All Dimensions in mm
Test Condition
CB
CE
G
M
A
B
C
D
E
H
K
L
α
= 20V, I
J
= 100μA, I
= 1.0mA, I
= 100μA, I
f = 100MHz
= 200V, I
= 6.0V, I
SOT-23
0.013
0.903
0.085
B
B
C
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
CE
0°
CE
CE
= 2.0mA
= 2.0mA
= 10mA,
θJA
© Diodes Incorporated
C
E
B
C
E
°C/W
Unit
mW
), power
mA
= 10V
= 0
= 0
= 0
= 10V
= 10V
°C
= 0
= 0
V
V
V
E
MMBTA42
0.180
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
= 0
8°
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MMBTA42-7-F Summary of contents
Page 1
... C CE ⎯ ⎯ 10mA 10V 30mA 10V 20mA 2.0mA 20mA 2.0mA 20V 1.0MHz 20V 10mA, ⎯ MHz f = 100MHz ), power θJA © Diodes Incorporated Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° MMBTA42 ...
Page 2
... 150° 25° -50° 100 I , COLLECTOR CURRENT (mA) C Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current -50° 25° 150° COLLECTOR CURRENT (mA) C Fig. 4, Base Emitter Voltage vs Collector Current MMBTA42 © Diodes Incorporated 1000 100 ...
Page 3
... YM = Date Code Marking Y = Year ex 2002 K3M M = Month ex September 2005 2006 2002 2003 2004 Mar Apr May Jun Jul IMPORTANT NOTICE LIFE SUPPORT www.diodes.com Shipping 3000/Tape & Reel 2007 2008 2009 2010 2011 Aug Sep Oct Nov MMBTA42 © Diodes Incorporated 2012 Z Dec D ...