MMBT4403-7-F Diodes Inc, MMBT4403-7-F Datasheet - Page 3

• Manufacturer Part Number: MMBT4403-7-F
• Description: TRANS PNP 40V 350MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT4403-7-F

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT4403-FDITR

DS30058 Rev. 9 - 2
1,000
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
100
10
1
0.5
0.4
0.3
0.2
0.1
1
0
1
Fig. 5 Typical Collector-Emitter Saturation Voltage
V
I
I
CE
C
B
= 10
I , COLLECTOR CURRENT (mA)
= 5V
C
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance
R
vs. Collector Current
10
T = 150°C
A
10
Cibo
T = 50°C
A
100
f = 1MHz
T = 25°C
A
Cobo
1,000
100
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1.6
1.2
1.4
1.0
0.6
0.8
0.4
0.2
1.0
0.9
0.3
0.8
0.7
0.6
0.5
0.4
0.2
0
0.001
0.1
I = 1mA
C
Fig. 4 Typical Collector Saturation Region
0.01
Fig. 6 Typical Base-Emitter Voltage
I , COLLECTOR CURRENT (mA)
C
I ,BASE CURRENT (mA)
B
I = 10mA
C
vs. Collector Current
1
I = 30mA
C
0.1
I = 100mA
C
T = 150°C
A
1
T = 25°C
A
T = -50°C
A
10
I = 300mA
C
10
V
CE
= 5V
© Diodes Incorporated
100
MMBT4403
100