MMBT3906-7-F Diodes Inc, MMBT3906-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT3906-7-F
• Description: TRANS PNP 40V 300MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT3906-7-F

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 300mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3906-7-F; MMBT3906-FDITR; Q2283544

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
MMBT3906
Document number: DS30059 Rev. 15 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
400
250
350
300
200
150
100
50
4. Short duration pulse test used to minimize self-heating effect.
0
0
25
T , AMBIENT TEMPERATURE (°C)
A
50
Characteristic
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
C
I
C
h
CEX
CBO
h
NF
2 of 4
I
h
h
h
f
t
t
BL
obo
t
t
FE
ibo
oe
ie
re
fe
T
d
s
r
f
-0.65
Min
-5.0
100
100
250
-40
-40
2.0
0.1
3.0
60
80
60
30
0.001
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.01
0.1
1
0.1
Single Non-repetitive Pulse
T = 25°C
DUT mounted onto 1xMRP
FR-4 board
A
-0.25
-0.40
-0.85
-0.95
Max
300
400
225
V , COLLECTOR-EMITTER VOLTAGE (V)
-50
-50
-50
4.5
4.0
10
12
10
60
35
35
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
x 10
Unit
MHz
nA
nA
nA
kΩ
μS
dB
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
1
-4
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CB
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
= -10μA, I
= -10mA, I
= -10μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -50mA, V
= -100mA, V
= -50mA, I
= -10mA, I
= -50mA, I
Pw = 100ms
= 1.0kΩ, f = 1.0kHz
= I
DC
= -30V, V
= -30V, I
= -30V, V
= 10V, I
= -5.0V, I
= -5.0V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -20V, I
= -3.0V, I
= -3.0V, I
B2
= 0.5V, I
= -1.0mA
Test Condition
10
C
E
C
B
E
B
B
B
C
B
C
C
C
EB(OFF)
EB(OFF)
= 0
= 0
= 1.0mA,
CE
= -1.0mA
= 0
= -5.0mA
= -1.0mA
= -5.0mA
= -10mA,
CE
CE
CE
CE
= 0
= -100μA,
= -10mA,
= -10mA,
B1
= -1.0V
MMBT3906
= -1.0V
= -1.0V
= -1.0V
= -1.0V
= -1.0mA
Pw = 10ms
= -3.0V
= -3.0V
© Diodes Incorporated
September 2009
E
C
100
= 0
= 0