MUN5116DW1T1 ON Semiconductor, MUN5116DW1T1 Datasheet - Page 4

• Manufacturer Part Number: MUN5116DW1T1
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5116DW1T1

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 4) (Continued)
Output Voltage (on)
Output Voltage (off)
Input Resistor
Resistor Ratio
(V
(V
(V
(V
(V
(V
(V
CC
CC
CC
CC
CC
CC
CC
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
B
B
B
B
B
B
B
= −2.5 V, R
= −3.5 V, R
= −5.5 V, R
= −4.0 V, R
= −0.5 V, R
= −0.05 V, R
= − 0.25 V, R
Characteristic
L
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
L
= 1.0 kW)
= 1.0 kW)
(T
A
= 25°C unless otherwise noted, common for Q
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5137DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
MUN5112DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5113DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5111DW1T1G
MUN5111DW1T1G
MUN5111DW1T1G
MUN5111DW1T1G
http://onsemi.com
4
Symbol
R
V
V
R
1
OH
OL
/R
1
2
1
and Q
0.055
0.038
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
15.4
32.9
15.4
1.54
32.9
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
0.8
0.8
0.8
0.8
0.8
1.7
70
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2
) (Continued)
0.047
0.21
0.12
0.47
2.15
Typ
100
4.7
1.0
2.2
4.7
4.7
2.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
22
47
10
10
22
47
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.185
0.056
Max
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
28.6
61.1
28.6
2.86
61.1
0.25
0.56
130
6.1
1.3
2.9
6.1
6.1
1.2
1.2
1.2
1.2
1.2
1.2
1.2
2.6
13
13
13
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Vdc
Vdc
k W