NSBC114TPDXV6T1G ON Semiconductor, NSBC114TPDXV6T1G Datasheet - Page 4

• Manufacturer Part Number: NSBC114TPDXV6T1G
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC114TPDXV6T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Other names: NSBC114TPDXV6T1GOS

ELECTRICAL CHARACTERISTICS
(T
ON CHARACTERISTICS (Note 3)
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Input Resistor
Resistor Ratio
A
= 25°C unless otherwise noted, common for Q
Characteristic
300
250
200
150
100
50
0
−50
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC143TPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC143TPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC114EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC113EPDXV6T1G
NSBC114EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123JPDXV6T1G
NSBC123JPDXV6T1G
T
1
A
and Q
, AMBIENT TEMPERATURE (°C)
0
Figure 1. Derating Curve
R
http://onsemi.com
2
qJA
, − minus sign for Q
= 490°C/W
50
4
Symbol
R1/R2
R1
1
(PNP) omitted)
100
0.055
0.038
15.4
32.9
15.4
1.54
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
0.8
0.8
0.8
0.8
−
−
150
0.047
0.21
0.47
Typ
4.7
1.0
2.2
4.7
4.7
2.2
1.0
1.0
1.0
1.0
1.0
1.0
0.1
10
22
47
10
10
22
−
−
0.185
0.056
Max
28.6
61.1
28.6
2.86
0.25
0.56
6.1
1.3
2.9
6.1
6.1
1.2
1.2
1.2
1.2
1.2
1.2
13
13
13
−
−
Unit
k W