NSBC114YDXV6T1 ON Semiconductor, NSBC114YDXV6T1 Datasheet - Page 8

• Manufacturer Part Number: NSBC114YDXV6T1
• Description: TRANS BRT NPN DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC114YDXV6T1

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: NSBC114YDXV6T1OS; NSBC114YDXV6T1OS; NSBC114YDXV6TOSTR

0.001
3.5
2.5
1.5
0.5
0.01
0.1
4
3
2
1
0
0
1
0
2
I
C
/I
B
4
= 10
Figure 19. Output Capacitance
V
6
R
Figure 17. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
8
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1
10
15 20
CE(sat)
0.1
40
10
1
NSBC114EDXV6T1, NSBC114EDXV6T5
0
Figure 21. Input Voltage versus Output Current
25 30
versus I
V
O
= 0.2 V
T
A
f = 1 MHz
l
T
E
10
35 40
= −25°C
A
60
= 0 V
C
= 25°C
75°C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
45 50
20
80
8
T
A
= −25°C
30
100
300
250
200
150
100
10
50
1
0
1
0
Figure 20. Output Current versus Input Voltage
V
T
CE
2
A
= 75°C
= 10
40
4
25°C
2
6
Figure 18. DC Current Gain
75°C
I
C
V
8
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
10
4
15 20 40 50 60 70 80 90
−25°C
6
−25°C
25°C
T
A
V
= 75°C
O
25°C
8
= 5 V
100
10