EMD5DXV6T1 ON Semiconductor, EMD5DXV6T1 Datasheet - Page 2

• Manufacturer Part Number: EMD5DXV6T1
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of EMD5DXV6T1

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K, 47K
• Resistor - Emitter Base (r2) (ohms): 10K, 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: EMD5DXV6T1OS

MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1. FR−4 @ Minimum Pad
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25 C
Thermal Resistance
Total Device Dissipation
Derate above 25 C
Thermal Resistance
Junction and Storage Temperature
(T
A
= 25 C unless otherwise noted, common for Q
(Both Junctions Heated)
(One Junction Heated)
Characteristic
Characteristic
EMD5DXV6T1, EMD5DXV6T5
Rating
Junction-to-Ambient
Junction-to-Ambient
http://onsemi.com
T
T
A
A
= 25 C
= 25 C
2
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Symbol
Symbol
Symbol
T
V
V
R
R
J
P
P
CBO
CEO
, T
I
qJA
qJA
C
D
D
stg
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
−55 to
Value
+150
Max
Max
100
357
350
500
250
2.9
4.0
50
50
mW/ C
mW/ C
mAdc
Unit
Unit
Unit
mW
mW
Vdc
Vdc
C/W
C/W
C