NSBC113EPDXV6T1 ON Semiconductor, NSBC113EPDXV6T1 Datasheet - Page 8

• Manufacturer Part Number: NSBC113EPDXV6T1
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC113EPDXV6T1

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: NSBC113EPDXV6T1OS

0.01
0.1
4
3
2
0
10
1
1
0
0
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR
I
C
/I
B
10
= 10
Figure 19. Output Capacitance
V
Figure 17. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
20
T
A
CE(sat)
100
= -25°C
0.1
10
1
0
Figure 21. Input Voltage versus Output Current
30
versus I
V
O
= 0.2 V
10
C
40
f = 1 MHz
l
T
E
40
A
I
= 0 V
C
= 25°C
, COLLECTOR CURRENT (mA)
25°C
75°C
T
http://onsemi.com
A
= -25°C
20
50
75°C
50
8
0.001
1000
100
10
0.01
100
30
0.1
10
25°C
1
1
0
Figure 20. Output Current versus Input Voltage
1
75°C
40
2
Figure 18. DC Current Gain
25°C
I
C
V
, COLLECTOR CURRENT (mA)
3
in
T
, INPUT VOLTAGE (VOLTS)
50
A
= -25°C
4
10
5
6
7
T
A
= 75°C
V
8
CE
V
O
= 10 V
= 5 V
-25°C
9
25°C
100
10