UMA4NT1 ON Semiconductor, UMA4NT1 Datasheet - Page 2

• Manufacturer Part Number: UMA4NT1
• Description: TRANS BRT PNP DUAL SS SOT-353
• Manufacturer: ON Semiconductor

Specifications of UMA4NT1

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Other names: UMA4NT1OS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
(V
(V
(V
(I
(I
(V
(I
(V
(V
C
C
C
CB
CB
EB
CE
CC
CC
= 10 mA, I
= 2.0 mA, I
= 10 mA, I
= 6.0, I
= 50 V, I
= 50 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
C
E
B
E
B
C
= 5.0 mA)
B
= 0)
B
B
= 0)
= 0)
= 5.0 mA)
= 0.3 mA)
= 0)
= 2.5 V, R
= 0.5 V, R
L
L
Characteristic
= 1.0 kW)
= 1.0 kW)
250
200
150
100
50
0
−50
(T
A
= 25°C unless otherwise noted)
T
A
UMA4NT1, UMA6NT1
, AMBIENT TEMPERATURE (°C)
0
Figure 1. Derating Curve
R
http://onsemi.com
qJA
= 833°C/W
50
2
UMA4NT1
UMA6NT1
UMA4NT1
UMA6NT1
UMA4NT1
UMA6NT1
100
V
V
V
Symbol
(BR)CBO
(BR)CEO
CE(SAT)
I
I
I
V
V
CBO
CEO
h
EBO
R1
FE
OH
OL
150
Min
160
160
4.9
7.0
50
50
33
−
−
−
−
−
−
Typ
250
250
10
47
−
−
−
−
−
−
−
−
−
Max
0.25
100
500
0.9
0.2
0.2
13
61
−
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW