MUN5237DW1T1 ON Semiconductor, MUN5237DW1T1 Datasheet - Page 16

• Manufacturer Part Number: MUN5237DW1T1
• Description: TRANS BRT NPN DUAL 50V SOT363
• Manufacturer: ON Semiconductor

Specifications of MUN5237DW1T1

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: MUN5237DW1T1OS

0.001
0.01
0.1
1
0
I
C
/I
−25°C
V
B
R
= 10
Figure 54. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
5
I
C
Figure 52. V
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1G
25°C
10
TBD
CE(sat)
15
Figure 56. Input Voltage versus Output Current
75°C
versus I
20
I
C
, COLLECTOR CURRENT (mA)
C
25
http://onsemi.com
TBD
30
16
1000
100
10
1
1
Figure 55. Output Current versus Input Voltage
Figure 53. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
TBD
T
10
A
75°C
= −25°C
25°C
V
CE
= 10 V
100