EMD4DXV6T1G ON Semiconductor, EMD4DXV6T1G Datasheet

EMD4DXV6T1G

Manufacturer Part Number

EMD4DXV6T1G

Description

TRANS BRT NPN/PNP DL 50V SOT-563

Manufacturer

ON Semiconductor

Datasheet

1.EMD4DXV6T1G.pdf (5 pages)

Specifications of EMD4DXV6T1G

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

47K, 10K

Resistor - Emitter Base (r2) (ohms)

47K

Dc Current Gain (hfe) (min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (max)

500nA

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EMD4DXV6T1G

Manufacturer:

ON Semiconductor

Quantity:

1 150

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EMD4DXV6T1G

Manufacturer:

Quantity:

30 000

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EMD4DXV6T1,

EMD4DXV6T5

Dual Bias Resistor

Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the EMD4DXV6T1 series,

two complementary BRT devices are housed in the SOT−563 package

which is ideal for low power surface mount applications where board

space is at a premium.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 board with minimum mounting pad.

MAXIMUM RATINGS

and Q

October, 2005− Rev. 1

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Thermal Resistance,

Junction and Storage Temperature

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

These are Pb−Free Devices

Derate above 25°C (Note 1)

Junction-to-Ambient (Note 1)

Derate above 25°C

Junction-to-Ambient (Note 1)

, − minus sign for Q

= 25°C (Note 1)

(One Junction Heated)

Characteristic

Rating

(PNP) omitted)

= 25°C unless otherwise noted, common for Q

Preferred Devices

Symbol

, T

CBO

CEO

qJA

stg

−55 to +150

Value

Max

100

357

350

500

250

2.9

4.0

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

EMD4DXV6T1G

EMD4DXV6T5G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

(3)

(4)

U7 = Specific Device Code

M = Date Code

MARKING DIAGRAM

http://onsemi.com

= Pb−Free Package

CASE 463A

(Pb−Free)

SOT−563

Package

STYLE 1

(5)

U7 M G

Publication Order Number:

(2)

4000/Tape & Reel

8000/Tape & Reel

Shipping

EMD4DXV6/D

(1)

(6)

†

Related parts for EMD4DXV6T1G

EMD4DXV6T1G Summary of contents

Page 1

... U7 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping EMD4DXV6T1G SOT−563 4000/Tape & Reel (Pb−Free) EMD4DXV6T5G SOT−563 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current ( Collector-Emitter Cutoff Current ( Emitter-Base Cutoff Current ( CHARACTERISTICS = 10 mA, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6T1 NPN TRANSISTOR −25° 25°C 1 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V vs. I CE(sat) 1 0.8 0.6 ...

Page 5

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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