NSBA114YDP6T5G ON Semiconductor, NSBA114YDP6T5G Datasheet - Page 4

• Manufacturer Part Number: NSBA114YDP6T5G
• Description: TRANS BRT PNP DUAL 50V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NSBA114YDP6T5G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 408mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

ELECTRICAL CHARACTERISTICS
Input Resistor
Resistor Ratio
NSBA114EDP6T5G/NSBA124EDP6T5G
NSBA144EDP6T5G/NSBA143EDP6T5G
NSBA114YDP6T5G
NSBA123TDP6T5G/NSBA114TDP6T5G/
NSBA115TDP6T5G
NSBA143ZDP6T5G
NSBA123JDP6T5G
NSBA144WDP6T5G
Characteristic
(T
A
= 25°C unless otherwise noted) (Continued)
NSBA114TDP6T5G
NSBA114EDP6T5G
NSBA124EDP6T5G
NSBA144EDP6T5G
NSBA114YDP6T5G
NSBA123TDP6T5G
NSBA143EDP6T5G
NSBA143ZDP6T5G
NSBA123JDP6T5G
NSBA144WDP6T5G
NSBA115TDP6T5G
http://onsemi.com
4
Symbol
R
R1
1
/R
2
0.055
0.038
15.4
32.9
1.54
32.9
0.17
Min
7.0
7.0
7.0
1.5
3.3
3.3
0.8
1.7
70
−
0.047
0.21
Typ
100
2.2
4.7
4.7
2.2
1.0
0.1
2.1
10
10
22
47
10
47
−
0.185
0.056
Max
28.6
61.1
2.86
61.1
0.25
130
2.9
6.1
6.1
1.2
2.6
13
13
13
−
Unit
kW