NSBC115TPDP6T5G ON Semiconductor, NSBC115TPDP6T5G Datasheet - Page 6

• Manufacturer Part Number: NSBC115TPDP6T5G
• Description: TRANS BRT DUAL COMPL SOT-963
• Manufacturer: ON Semiconductor

Specifications of NSBC115TPDP6T5G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 339mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 100kohm
• Rf Transistor Case: SOT-963
• No. Of Pins: 6
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

0.10
0.01
1.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
0
I
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 PNP TRANSISTOR
C
/I
5
5
B
= 10
Figure 8. Output Capacitance
I
10
C
10
REVERSE BIAS VOLTAGE (V)
, COLLECTOR CURRENT (mA)
Figure 6. V
15
15
T
A
= 25°C
20
20
1.0
0.1
10
CE(sat)
25
25
0
Figure 10. Input Voltage vs. Output Current
T
30
30
A
5
vs. I
150°C
−55°C
= −55°C
T
A
35
35
C
10
I
= 150°C
C
, COLLECTOR CURRENT (mA)
40
40
15
http://onsemi.com
25°C
45
45
20
6
50
50
25
1000
0.01
30
100
100
1.0
1.0
0.1
10
10
0.1
0
35
V
Figure 9. Output Current vs. Input Voltage
CE
150°C
25°C
= 10 V
40
25°C
I
C
1
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
45
V
in
, INPUT VOLTAGE (V)
150°C
1
50
−55°C
2
−55°C
3
10
4
100
5