BCR 108S E6433 Infineon Technologies, BCR 108S E6433 Datasheet - Page 9

TRANSISTOR NPN DGTL SOT-363

BCR 108S E6433

Manufacturer Part Number
BCR 108S E6433
Description
TRANSISTOR NPN DGTL SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 108S E6433

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
170MHz
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
0.047
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BCR108SE6433XT
SP000010740
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.65
1
Package SOT323
0.3
2
±0.2
Pin 1
+0.1
-0.05
0.65
3
2.15
4
0.65
2
3x
0.1
0.6
M
9
0.65
0.1 MAX.
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
0.2
0.2
0.1
1.1
M
A
0.9
0.15
±0.1
+0.1
-0.05
A
BCR108...
2007-07-24

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