NSB1706DMW5T1G ON Semiconductor, NSB1706DMW5T1G Datasheet - Page 2

• Manufacturer Part Number: NSB1706DMW5T1G
• Description: TRANS BRT NPN DUAL 50V SOT353
• Manufacturer: ON Semiconductor

Specifications of NSB1706DMW5T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSB1706DMW5T1GOS

NOTE: New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
Resistor Ratio
(V
(V
(V
(I
(I
(V
(I
(V
(V
C
C
C
CB
CE
EB
CE
CC
CC
= 10 mA, I
= 2.0 mA, I
= 10 mA, I
= 50 V, I
= 50 V, I
= 6.0 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
E
E
B
C
B
C
B
= 0)
B
= 0)
= 0)
= 5.0 mA)
B
= 1 mA)
= 0)
= 0)
= 2.5 V, R
= 0.25 V, R
L
Characteristic
= 1.0 kW)
L
= 1.0 kW)
300
250
200
150
100
50
0
−50
(T
A
= 25°C unless otherwise noted, common for Q
T
A
, AMBIENT TEMPERATURE (°C)
0
Figure 1. Derating Curve
R
http://onsemi.com
qJA
= 833°C/W
50
2
100
V
V
Symbol
V
R1/R2
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
V
V
h
CBO
CEO
EBO
R1
FE
OH
OL
1
and Q
150
0.055
2
Min
)
4.9
3.3
50
50
80
−
−
−
−
−
Typ
200
4.7
0.1
−
−
−
−
−
−
−
−
0.185
Max
0.18
0.25
100
500
0.2
6.1
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW