MUN5230DW1T1G ON Semiconductor, MUN5230DW1T1G Datasheet - Page 3

TRANS BRT NPN DUAL 50V SOT-363

MUN5230DW1T1G

Manufacturer Part Number
MUN5230DW1T1G
Description
TRANS BRT NPN DUAL 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of MUN5230DW1T1G

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
1K
Dc Current Gain (hfe) (min) @ Ic, Vce
3 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
1kohm
Base-emitter Resistor R2
1kohm
Resistor Ratio, R1 / R2
1
No. Of Pins
6
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
MUN5230DW1T1G
MUN5230DW1T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUN5230DW1T1G
Manufacturer:
ON Semiconductor
Quantity:
2 350
Part Number:
MUN5230DW1T1G
Manufacturer:
ON
Quantity:
30 000
Final Product/Process Change Notification #16266
MMBZ5263BLT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMBZ33VALT1G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
SOD-123
MMSD103T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
1000 cyc
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/2
Results
0/960
0/240
0/240
0/240
0/240
0/6
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/6
0/80
0/2
0/30
0/240
0/6
0/90
0/240
0/6
0/89
Page 3 of 36

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