UMF4NTR Rohm Semiconductor, UMF4NTR Datasheet - Page 3

• Manufacturer Part Number: UMF4NTR
• Description: TRANS DUAL PNP 12V 500MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMF4NTR

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
! ! ! ! Electrical characteristic curves
Tr1
Fig.4
Fig.1 Grounded emitter propagation
1000
1000
100
100
10
10
1
1000
1
0
100
1
10
vs. collector current ( ΙΙ )
0.1
Collector-emitter saturation voltage
1
Fig.7
BASE TO EMITTER VOLTAGE : V
V
Pulsed
I
Pulsed
C
COLLECTOR TO BASE VOLTAGE : V
CE
/I
0.2
=2V
B
COLLECTOR CURRENT : I
=20
Collector output capacitance
Emitter input capacitance
vs. emitter-base voltage
vs. collector-base voltage
0.4
characteristics
10
Ta=25°C
1
0.6
Ta=−40°C
Ta=125°C
0.8
Cib
100
1.0
10
Cob
C
(mA)
1.2
Ta = 25°C
I
f = 1MHz
BE
E
= 0A
(V)
1000
1.4
CB
100
( V)
1000
100
10000
10
1000
1
Fig.5
100
1
10
0.001
0.01
0.1
1
10
0.01
1
Fig.2
COLLECTOR CURRENT : I
Base-emitter saturation voltage
vs. collector current
Ta=25°C
Single Pulsed
COLLECTOR CURRENT : I
Ta=25°C
Ta=125°C
EMITTER CURRENT : V
DC current gain vs.
Ta=−40°C
10
0.1
Fig.8
collector current
10
Ta=25°C
DC
Ta=125°C
Safe operation area
1
100ms
100
Ta=−40°C
100
10ms
C
(mA)
C
V
Pulsed
(mA)
10
I
Pulsed
CE
CE
1ms
C
/I
=2V
(V)
B
=20
1000
1000
100
Fig.3
1000
1000
100
100
10
10
1
Collector-emitter saturation voltage
1
vs. collector current ( Ι )
1
1
Fig.6
Ta=25°C
Pulsed
I
V
Ta=25°C
Pulsed
C
/I
CE
B
COLLECTOR CURRENT : I
=10
I
=2V
C
/I
EMITTER CURRENT : I
Gain bandwidth product
B
I
vs. emitter current
C
=20
/I
B
=50
10
10
100
100
UMF4N
E
(mA)
C
(mA)
1000
1000
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