UMA3NTR Rohm Semiconductor, UMA3NTR Datasheet

TRANS DUAL PNP 50V 100MA SOT-353

UMA3NTR

Manufacturer Part Number
UMA3NTR
Description
TRANS DUAL PNP 50V 100MA SOT-353
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of UMA3NTR

Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Tr
Emitter common
(dual digital transistors)
EMA3 / UMA3N / FMA3A
1) Two DTA143Ts in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
Epitaxial planar type PNP silicon transistor (Built-in
resistor type.)
The following characteristics apply to both DTr
DTr
Features
Structure
Equivalent circuit
ansistors
EMA3 / UMA3N
2
.
R
1
=4.7kΩ
DTr
2
R
1
(4)
(3)
(2)
(5)
R
(1)
1
DTr
1
FMA3A
R
1
=4.7kΩ
DTr
2
R
1
(2)
(3)
(4)
(1)
R
(5)
1
DTr
1
1
and
External dimensions (Unit : mm)
EMA3
UMA3N
ROHM : SMT5
EIAJ : SC-74A
FMA3A
ROHM : EMT5
ROHM : UMT5
EIAJ : SC-88A
EMA3 / UMA3N / FMA3A
Abbreviated symbol : A3
Abbreviated symbol : A3
Abbreviated symbol : A3
0.3to0.6
0.1Min.
( 4 )
( 5 )
1.2
1.6
1.25
2.1
1.6
2.8
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.A
1/2

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UMA3NTR Summary of contents

Page 1

Tr ansistors Emitter common (dual digital transistors) EMA3 / UMA3N / FMA3A Features 1) Two DTA143Ts in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. Structure Epitaxial planar type PNP silicon ...

Page 2

Tr ansistors Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage V Collector-emitter voltage V V Emitter-base voltage Collector current EMA3, UMA3N Collector power dissipation FMA3A Junction temperature Storage temperature Tstg ∗ 1 120mW per element must not be exceeded. ∗ ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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