DDC122TU-7-F Diodes Inc, DDC122TU-7-F Datasheet - Page 2

• Manufacturer Part Number: DDC122TU-7-F
• Description: TRANS PREBIAS PNP 200MW SOT-363
• Manufacturer: Diodes Inc

Specifications of DDC122TU-7-F

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 220
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Resistor - Emitter Base (r2) (ohms): -

Electrical Characteristics
Electrical Characteristics
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
* Transistor - For Reference Only
DS30424 Rev. 6 - 2
(150mW per element must not be exceeded).
150
250
200
100
50
0
-50
Characteristic
Characteristic
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Derating Curve
0
50
DDC122TU
DDC142TU
DDC122TU
DDC142TU
DDC122TU
DDC142TU
DDC122LU
DDC142JU
DDC122LU
DDC142JU
DDC122LU
DDC142JU
DDC122LU
DDC142JU
@T
@T
A
A
100
= 25°C unless otherwise specified
= 25°C unless otherwise specified
°
Symbol
Symbol
V
BV
BV
BV
V
V
V
I
I
I
CE(sat)
O(off)
h
CBO
O(on)
EBO
G
l(off)
l(on)
f
f
I
FE
150
CBO
CEO
EBO
T
T
l
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l
2 of 3
Min
Min
100
100
0.3
0.3
56
56
50
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Typ
200
⎯
⎯
⎯
⎯
⎯
⎯
Typ
250
250
200
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.3V
R1, R2 Types
R1- Only
2.0
2.0
0.5
⎯
28
13
⎯
⎯
Max
600
600
0.5
0.5
0.5
0.3
⎯
⎯
⎯
⎯
Unit
MHz V
mA V
μA
⎯
MHz V
Unit
V
V
V
μA
μA
⎯
V
V
V
V
V
V
V
I
V
V
O
CC
O
O
I
CC
O
CE
I
I
I
I
V
V
I
I
/I
C
C
E
E
C
C
= 5V
CB
EB
CE
l
= 0.3V, I
= 0.3V, I
= 5V, I
= 50μA
= 1mA
= 50μA
= 50μA
= 5mA, I
= 1mA, V
= 5mA/0.25mA
= 10V, I
= 5V, I
= 50V, V
= 4V
= 50V
= 10V, I
O
O
O
O
= 10mA
E
B
Test Condition
= 100μA
I
Test Condition
CE
= 20mA
= 20mA
E
= 5mA, f = 100MHz
= 0.25mA
= 0V
= -5mA, f = 100MHz
= 5V
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