DDA142TU-7-F Diodes Inc, DDA142TU-7-F Datasheet - Page 2

• Manufacturer Part Number: DDA142TU-7-F
• Description: TRANS PREBIAS PNP 200MW SOT-363
• Manufacturer: Diodes Inc

Specifications of DDA142TU-7-F

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 470
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Resistor - Emitter Base (r2) (ohms): -

Electrical Characteristics
Electrical Characteristics
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
* Transistor - For Reference Only
DS30423 Rev. 7 - 2
150
250
200
100
50
0
-50
(150mW per element must not be exceeded)
Characteristic
Characteristic
R
T , AMBIENT TEMPERATURE ( C)
θJA
A
Fig. 1 Power Derating Curve
= 625
0
°C/W
50
DDA122TU
DDA142TU
DDA122TU
DDA142TU
DDA122TU
DDA142TU
DDA122LU
DDA122LU
DDA122LU
DDA122LU
DDA142JU
DDA142JU
DDA142JU
DDA142JU
@T
@T
A
= 25°C unless otherwise specified
A
100
= 25°C unless otherwise specified
°
Symbol
Symbol
V
BV
BV
BV
V
V
V
I
I
I
CE(sat)
O(off)
h
CBO
O(on)
EBO
G
l(off)
l(on)
f
f
I
FE
CBO
CEO
EBO
T
T
150
l
www.diodes.com
l
2 of 3
Min
-0.3
-0.3
Min
100
100
-50
-40
56
56
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
Typ
200
⎯
⎯
⎯
⎯
⎯
⎯
Typ
250
250
200
⎯
⎯
⎯
⎯
⎯
⎯
R1, R2 Types
-0.3V
R1 Only Types
Max
-2.0
-2.0
-0.5
-28
-13
⎯
⎯
⎯
Max
-0.5
-0.5
-0.5
-0.3
600
600
⎯
⎯
⎯
⎯
Unit
MHz V
mA V
μA
⎯
MHz V
Unit
V
V
V
μA
μA
⎯
V
V
V
V
V
V
V
I
V
V
O
CC
O
O
I
CC
O
CE
I
I
I
I
V
V
I
I
/I
C
C
E
E
C
C
= -5V
CB
EB
CE
l
= -0.3V, I
= -0.3V, I
= -5V, I
= -50μA
= -1mA
= -50μA
= -50μA
= -5mA, I
= -1mA, V
= -5mA/-0.25mA
= -10V, I
= -5V, I
= -50V, V
= -4V
= -50V
= -10V, I
O
O
Test Condition
O
O
= -10mA
E
B
Test Condition
= -100μA
I
CE
= -20mA
= -20mA
E
= -5mA, f = 100MHz
= -0.25mA
= 0V
= 5mA, f = 100MHz
= -5V
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