HL6501MG-A Opnext, HL6501MG-A Datasheet

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HL6501MG-A

Manufacturer Part Number
HL6501MG-A
Description
Laser Diode MQW-LD 665nm 35mW
Manufacturer
Opnext
Type
MQW-LDr
Datasheet
1.HL6501MG-A.pdf (4 pages)

Specifications of HL6501MG-A

Maximum Optical Output Power
35 mW
Maximum Optical Output Power Range
5 to 50 mW
Laser Reverse Voltage
2 V
Photodiode Reverse Voltage
30 V
Wavelength
665 nm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
HL6501MG-A
Manufacturer:
OPNEXT
Quantity:
20 000
HL8325G
GaAlAs Laser Diode
Description
The HL8325G is a high-power 0.8 μm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its
internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
source for optical disk memories, card readers and various other types of optical equipment.
Features
• Infrared light output: λp = 820 to 840 nm
• High power:
• Built-in monitor photodiode
• Single longitudinal mode
Absolute Maximum Ratings
Optical output power
Pulse optical output power
Laser diode reverse voltage
Photo diode reverse voltage
Operating temperature
Storage temperature
Note: Pulse condition : Pulse width = 1 μs, duty = 50%
Optical and Electrical Characteristics
Threshold current
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Rev.0 Aug. 01, 2008 page 1 of 4
standard continuous operation at 40 mW (CW),
pulsed operation at 50 mW
Item
Item
Ith
ηs
θ//
θ⊥
A
λp
I
S
Symbol
S
P
P
V
V
Topr
Tstg
O
O(pulse)
R(LD)
R(PD)
Min
820
0.4
18
20
—
—
7
Symbol
Typ
830
0.5
40
10
22
40
5
Package Type
HL8325G: G2
Max
840
130
0.9
70
14
32
—
–10 to +60
–40 to +85
Ratings
50 *
40
30
2
mW/mA
Unit
mA
μm
nm
μA
°
°
—
24 (mW) / (I
P
P
P
P
P
PD
O
O
O
O
O
= 4 mW, V
Internal Circuit
= 40 mW, FWHM
= 40 mW, FWHM
= 4 mW, NA = 0.4
= 40 mW
Test Conditions
1
ODE2051-00 (M)
2
Aug. 01, 2008
(32mW)
3
R(PD)
(T
Unit
(T
mW
mW
°C
°C
V
V
LD
C
C
– I
= 25°C)
= 25°C)
= 5 V
Rev.0
(8mW)
)

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HL6501MG-A Summary of contents

Page 1

HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 μm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage suitable ...

Page 2

HL8325G Typical Characteristic Curves Optical Output Power vs. Foward Current 50 25° 0° Foward current, I Slope Efficiency vs. Case Temperature 1.0 0.8 0.6 0.4 0 ...

Page 3

HL8325G Package Dimensions Rev.0 Aug. 01, 2008 page 9.0 –0.025 1.0 ± 0.1 (0.65) +0.3 7.2 –0.2 6.2 ± 0.2 ( 2.0) Emitting Point 3 – 0.45 ± 0 2.54 ...

Page 4

... HL8325G Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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