MT48LC8M16A2TG-7E:G Micron Technology Inc, MT48LC8M16A2TG-7E:G Datasheet - Page 62

• Manufacturer Part Number: MT48LC8M16A2TG-7E:G
• Description: DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC8M16A2TG-7E:G

• Density: 128 Mb
• Maximum Clock Rate: 143 MHz
• Package: 54TSOP-II
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 5.4 ns
• Operating Temperature: 0 to 70 °C
• Organization: 8Mx16
• Address Bus: 14b
• Access Time (max): 5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 165mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

Figure 46:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
DQML, DQMH
A0–A9, A11
COMMAND
BA0, BA1
DQM /
CLK
A10
CKE
DQ
t CMS
t CKS
t AS
t AS
t AS
Alternating Bank Read Accesses
ACTIVE
BANK 0
T0
ROW
ROW
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
t CK
T1
1. For this example, BL = 4, and CL = 2.
2. x16: A9 and A11 = “Don’t Care.”
NOP
x8: A11 = “Don’t Care.”
ENABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
BANK 0
T2
READ
t CMH
t CH
CAS Latency - BANK 0
T3
NOP
t LZ
t AC
62
BANK 3
ACTIVE
T4
ROW
ROW
D
OUT
t OH
t AC
m
t RCD - BANK 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
m + 1
t OH
t AC
ENABLE AUTO PRECHARGE
COLUMN b 2
BANK 3
D
T6
OUT
128Mb: x4, x8, x16 SDRAM
READ
m + 2
t OH
t AC
CAS Latency - BANK 3
©1999 Micron Technology, Inc. All rights reserved.
t RP - BANK 0
D
T7
NOP
OUT
Timing Diagrams
m + 3
t OH
t AC
BANK 0
T8
ACTIVE
ROW
ROW
DON’T CARE
UNDEFINED
D
OUT
t RCD - BANK 0
t OH
t AC
b