MT48LC4M16A2TG-7E IT:G Micron Technology Inc, MT48LC4M16A2TG-7E IT:G Datasheet - Page 42

• Manufacturer Part Number: MT48LC4M16A2TG-7E IT:G
• Description: DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M16A2TG-7E IT:G

• Density: 64 Mb
• Maximum Clock Rate: 143 MHz
• Package: 54TSOP-II
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 5.4 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Organization: 4Mx16
• Address Bus: 14b
• Access Time (max): 5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 10:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
Current State
precharging
precharge)
precharge)
activating,
(with auto
(with auto
precharge
precharge
active, or
disabled)
disabled)
Write
Write
(auto
(auto
Read
Read
Row
Any
Idle
Truth Table 4 – Current State Bank n, Command to Bank m
(Notes 1–6 apply to entire table; notes appear below and on next page)
Notes:
CS#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS#
1. This table applies when CKE
2. This table describes alternate bank operation, except where noted; i.e., the current state is
3. Current state definitions:
4. AUTO REFRESH, SELF REFRESH, and LOAD MODE REGISTER commands may only be issued
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
after
for bank n and the commands shown are those allowed to be issued to bank m (assuming
that bank m is in such a state that the given command is allowable). Exceptions are covered
in the notes below.
when all banks are idle.
represented by the current state only.
precharge enabled:
precharge enabled:
t
CAS#
XSR has been met (if the previous state was self refresh).
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
Write w/auto
Read w/auto
Row active: A row in the bank has been activated, and
WE#
Write: A WRITE burst has been initiated, with auto precharge disabled, and
Read: A READ burst has been initiated, with auto precharge disabled, and
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
Idle: The bank has been precharged, and
data bursts/accesses and no register accesses are in progress.
has not yet terminated or been terminated.
has not yet terminated or been terminated.
Starts with registration of a READ command with auto precharge
enabled, and ends when
bank will be in the idle state.
Starts with registration of a WRITE command with auto precharge
enabled, and ends when
bank will be in the idle state.
COMMAND INHIBIT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any command otherwise allowed to bank m
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE
n-1
42
was HIGH and CKE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command (Action)
t
t
RP has been met. After
RP has been met. After
n
is HIGH (see Table 8 on page 39) and
64Mb: x4, x8, x16 SDRAM
t
RP has been met.
©2000 Micron Technology, Inc. All rights reserved.
t
RCD has been met. No
t
t
RP is met, the
RP is met, the
Commands
7, 8, 14
7, 8, 15
7, 8, 16
7, 8, 17
Notes
7, 10
7, 11
7, 12
7, 13
7
7
9
9
9
9