MT48LC4M16A2TG-75 IT:G TR Micron Technology Inc, MT48LC4M16A2TG-75 IT:G TR Datasheet - Page 3

DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II T/R

MT48LC4M16A2TG-75 IT:G TR

Manufacturer Part Number
MT48LC4M16A2TG-75 IT:G TR
Description
DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II T/R
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M16A2TG-75 IT:G TR

Package
54TSOP-II
Density
64 Mb
Address Bus Width
14 Bit
Operating Supply Voltage
3.3 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
6|5.4 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1090-2
Automotive Temperature
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_1.fm - Rev. N 12/08 EN
fully random access. Precharging one bank while accessing one of the other three banks
will hide the precharge cycles and provide seamless, high-speed, random-access
operation.
The 64Mb SDRAM is designed to operate in 3.3V memory systems. An auto refresh mode
is provided, along with a power-saving, power-down mode. All inputs and outputs are
LVTTL-compatible.
SDRAMs offer substantial advances in DRAM operating performance, including the
ability to synchronously burst data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks in order to hide precharge
time, and the capability to randomly change column addresses on each clock cycle
during a burst access.
The automotive temperature (AT) option adheres to the following specifications:
• 16ms refresh rate
• Self refresh not supported
• Ambient and case temperatures cannot be less than –40°C or greater than 105°C
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64Mb: x4, x8, x16 SDRAM
Automotive Temperature
©2000 Micron Technology, Inc. All rights reserved.

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