MT48LC16M16A2P-75 L:D TR Micron Technology Inc, MT48LC16M16A2P-75 L:D TR Datasheet - Page 56

• Manufacturer Part Number: MT48LC16M16A2P-75 L:D TR
• Description: DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M16A2P-75 L:D TR

• Package: 54TSOP-II
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1191-2

Figure 24: READ-to-WRITE With Extra Clock Cycle
Figure 25: READ-to-PRECHARGE
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Note:
Note:
Command
Command
Command
Address
Address
Address
1. CL = 3. The READ command can be issued to any bank, and the WRITE command can be
1. DQM is LOW.
DQM
CLK
to any bank.
CLK
CLK
DQ
DQ
DQ
Bank a,
Bank a,
Bank,
T0
T0
Col n
T0
READ
Col n
READ
READ
Col
CL = 2
CL = 3
T1
T1
T1
NOP
NOP
NOP
56
T2
T2
T2
NOP
NOP
NOP
D
OUT
Transitioning data
T3
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
NOP
D
D
D
t HZ
OUT
OUT
OUT
PRECHARGE
PRECHARGE
(a or all)
(a or all)
T4
T4
T4
Bank
Bank
NOP
X = 1 cycle
D
D
Transitioning data
256Mb: x4, x8, x16 SDRAM
OUT
OUT
X = 2 cycles
T5
T5
T5
Don’t Care
Bank,
WRITE
Col b
NOP
NOP
D
D
D
OUT
OUT
IN
t DS
t RP
t RP
© 1999 Micron Technology, Inc. All rights reserved.
T6
T6
READ Operation
NOP
NOP
D
OUT
Don’t Care
ACTIVE
Bank a,
ACTIVE
Bank a,
T7
T7
Row
Row