MT48LC16M16A2BG-7E:D Micron Technology Inc, MT48LC16M16A2BG-7E:D Datasheet - Page 78
![DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin VFBGA Tray](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48LC16M16A2BG-7E:D
Manufacturer Part Number
MT48LC16M16A2BG-7E:D
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr
Specifications of MT48LC16M16A2BG-7E:D
Package
54VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Clock Rate
143 MHz
Maximum Random Access Time
5.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-VFBGA
Organization
16Mx16
Address Bus
15b
Access Time (max)
5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48LC16M16A2BG-7E:D
Manufacturer:
MICRON
Quantity:
6 000
Company:
Part Number:
MT48LC16M16A2BG-7E:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT48LC16M16A2BG-7E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Command
Figure 48: WRITE Without Auto Precharge
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank
ACTIVE
Row
Row
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
Disable auto precharge
1. For this example, BL = 4 and the WRITE burst is followed by a manual PRECHARGE.
t CMS
t CL
Column m
t DS
WRITE
Bank
T2
D
IN
t CMH
t DH
t CH
t DS
T3
NOP
D
IN
t DH
t DS
T4
NOP
D
IN
t DH
78
t DS
NOP
T5
D
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR
NOP
T6
256Mb: x4, x8, x16 SDRAM
PRECHARGE
Single bank
All banks
PRECHARGE Operation
Bank
T7
© 1999 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
ACTIVE
Row
Row
Bank
T9
Don’t Care