MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 58

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 28: Random WRITE Cycles
Figure 29: WRITE-to-READ
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Note:
Note:
Command
Command
Address
Address
1. Each WRITE command can be issued to any bank. DQM is LOW.
1. The WRITE command can be issued to any bank, and the READ command can be to any
bank. DQM is LOW. CL = 2 for illustration.
CLK
CLK
DQ
DQ
WRITE
WRITE
Bank,
Bank,
Col n
Col n
D
D
T0
T0
IN
IN
WRITE
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Bank,
Col a
NOP
D
T1
T1
D
IN
IN
58
WRITE
Bank,
Col x
READ
Bank,
Col b
D
T2
T2
IN
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
Bank,
Col m
T3
T3
NOP
D
IN
D
NOP
T4
OUT
Don’t Care
NOP
D
T5
OUT
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation