EMA6DXV5T1G ON Semiconductor, EMA6DXV5T1G Datasheet
EMA6DXV5T1G
Manufacturer Part Number
EMA6DXV5T1G
Description
TRANS BR DUAL COMMON EMIT SOT553
Manufacturer
ON Semiconductor
Datasheet
1.EMA6DXV5T1G.pdf
(4 pages)
Specifications of EMA6DXV5T1G
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
230mW
Mounting Type
Surface Mount
Package / Case
SOT-553, SOT-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-
Other names
EMA6DXV5T1GOSTR
EMA6DXV5T1,
EMA6DXV5T5
Dual Common Emitter Bias
Resistor Transistor
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT−553 package which is designed for low power surface mount
applications.
MAXIMUM RATINGS
September, 2003 − Rev. 0
THERMAL CHARACTERISTICS
DEVICE MARKING AND RESISTOR VALUES
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25 C
Thermal Resistance −
Thermal Resistance −
Junction and Storage
This new series of digital transistors is designed to replace a single
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: Class 1
Available in 7 Inch Tape and Reel
Lead−Free Solder Plating
Semiconductor Components Industries, LLC, 2003
T
Junction-to-Ambient
Junction-to-Lead
Temperature Range
A
= 25 C
Characteristic
EMA6DXV5T1
Rating
Device
− Machine Model: Class B
(T
A
= 25 C unless otherwise noted)
Preferred Devices
Marking
Symbol
Symbol
T
V
V
R
R
J
UD
P
CBO
CEO
, T
I
qJA
qJL
C
D
stg
230 (Note 1)
338 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
−55 to +150
R1 (K)
Value
Max
100
47
50
50
1
R2 (K)
mAdc
Unit
Unit
Vdc
Vdc
mW
C/W
C/W
C/W
C
Preferred devices are recommended choices for future use
and best overall value.
EMA6DXV5T1
EMA6DXV5T5
Device
R2
(4)
ORDERING INFORMATION
(3)
BIAS RESISTOR
UD= Specific Device Code
M = Date Code
MARKING DIAGRAM
http://onsemi.com
PNP SILICON
TRANSISTOR
EMA6 / UMA6N
CASE 463B
5
1
SOT−553
5
SOT−553
SOT−553
Package
UD M
(2)
Publication Order Number:
1
4000/Tape & Reel
8000/Tape & Reel
EMA6DXV5T1/D
4 mm pitch
2 mm pitch
(1)
Shipping
(5) / (6)
R1
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EMA6DXV5T1G Summary of contents
Page 1
EMA6DXV5T1, EMA6DXV5T5 Preferred Devices Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current ( Collector−Emitter Cutoff Current ( Emitter−Base Cutoff Current ( ...
Page 3
INFORMATION FOR USING THE SOT−553 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure ...
Page 4
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3 ...