NSBC123JPDXV6T1G ON Semiconductor, NSBC123JPDXV6T1G Datasheet - Page 7

• Manufacturer Part Number: NSBC123JPDXV6T1G
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC123JPDXV6T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBC123JPDXV6T1GOS; NSBC123JPDXV6T1GOS; NSBC123JPDXV6T1GOSTR

0.001
4
3
2
0
1
0.01
0
0.1
1
0
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR
I
C
/I
B
10
Figure 14. Output Capacitance
= 10
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 12. V
I
C
, COLLECTOR CURRENT (mA)
T
A
= -25°C
20
20
CE(sat)
100
0.1
10
1
30
0
V
versus I
O
Figure 16. Input Voltage versus Output
= 0.2 V
25°C
10
f = 1 MHz
I
T
E
40
A
= 0 V
C
= 25°C
40
I
C
, COLLECTOR CURRENT (mA)
75°C
http://onsemi.com
20
50
Current
50
7
0.001
1000
0.01
100
100
0.1
30
10
10
1
T
1
0
A
Figure 15. Output Current versus Input Voltage
= -25°C
75°C
40
2
Figure 13. DC Current Gain
25°C
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
4
75°C
10
6
25°C
T
A
V
8
= -25°C
CE
V
T
O
A
= 10 V
-25°C
= 5 V
= 75°C
25°C
100
10